THAT340P14-U 低噪声晶体管阵列

技术规格

击穿电压Vce Breakdown Voltage Vce	36V
最大集电极电流 Maximum Collector Current	0.03A
晶体管增益h_FE Transistor Gain h_FE	75
电压噪声e_n Voltage Noise e_n	0.8nV
增益带宽积 Gain Bandwidth product	325MHz
电流增益匹配 Current Gain Matching	5%

详细描述

这些高性能阵列采用 THAT 专有的介电隔离 (DI) 工艺制造，具有低噪声 (0.8 nV/Hz½)、高速 (325-250 MHz) 和出色的 VBE 匹配（典型值为 500uV）。

凭借其 DI 结构，这些设备表现出极低的串扰和完全的直流隔离。

该器件的所有引脚均对 ESD 敏感

These high-performance arrays, manufactured in THAT's proprietary dielectric isolation (DI) process, exhibit low noise (0.8 nV/Hz½), high-speed (325-250 MHz), and excellent VBE matching (500uV typical).

With their DI construction, the devices exhibit extremely low crosstalk and complete DC isolation.

This device is ESD Sensitive on all pins