THAT300S14-U 低噪声晶体管阵列

Technical Specifications

击穿电压Vce Breakdown Voltage Vce	40V
最大集电极电流 Maximum Collector Current	0.05A
晶体管增益h_FETransistor Gain h_FE	100
电压噪声e_nVoltage Noise e_n	0.8nV
增益带宽积 Gain Bandwidth product	350MHz
电流增益匹配 Current Gain Matching	4%

Full Description

这些高性能阵列采用 THAT 专有的介电隔离 (DI) 工艺制造，具有低噪声 (0.8 nV/RtHz)、高速 (350 MHz) 和出色的 VBE 匹配（典型值为 500uV）。

凭借其 DI 结构，这些设备表现出极低的串扰和完全的直流隔离。

该器件的所有引脚均对 ESD 敏感

These high-performance arrays, manufactured in THAT's proprietary dielectric isolation (DI) process, exhibit low noise (0.8 nV/RtHz), high-speed (350 MHz), and excellent VBE matching (500uV typical).

With their DI construction, the devices exhibit extremely low crosstalk and complete DC isolation.

This device is ESD Sensitive on all pins