S6R1008W1A-LI10 1Mb异步快速SRAM

技术规格

访问时间 Access Time	10ns
内存大小 Memory Size	1Mbit
组织 Organisation	128K x 8
电源电压 Supply Voltage	1.65~3.6V
访问时间 Access Time	8/10/12/15

详细描述

高速静态随机存取存储器使用通用输入和输出线来简化布局。有一个输出使能引脚，其在读取周期中的运行速度比地址访问时间快，因此没有速度损失。

存储器允许通过数据字节控制（UB，LB）进行低字节和高字节访问。

该器件采用先进的 CMOS 工艺、基于 6-TR 的单元技术制造，性能可靠且具有成本效益，非常适合高速电路技术。

内存采用行业标准封装。

The high-speed Static Random Access Memory uses common input and output lines to simplify layout. There is an output enable pin which operates faster than address access time at read cycle so there is no los of speed.

The Memory allows that lower and upper byte access by data byte control(UB, LB).

The device is fabricated using advanced CMOS process, 6-TR based cell technology for reliable and cost effective performance, ideally suited for high-speed circuit technology.

The Memory is packaged in industry standard packages.

规格书和资料

Data Sheet