GKI-06259-5G N-Channel 表面贴装MOSFET

Technical Specifications

漏-源极电压 Drain Source Voltage	60V
漏极电流 Drain Current	22A
功率 Power	40W
通态电阻 On-state Resistance	0.02Ω
反向恢复时间 Reverse Recovery Time	29ns
总栅极电荷Qg Total Gate Charge Qg	7nC

Full Description

适用于高功率放大器和通用开关应用。

Suitable for high power amplifiers and general switching applications.

Datasheets & resources

Data Sheet