2SA2223A 功率晶体管 -260V -15A

  • LAPT(高频多发射极晶体管)
  • 高功率处理能力,160 W
  • 通过降低片上阻抗改善声音输出
  • 适用于专业音频 (PA) 应用
  • 2SC6145 的补充

技术规格

击穿电压 Vce Breakdown Voltage Vce -260V
最大集电极电流 Maximum Collector Current -15A
晶体管增益hFE Transistor Gain hFE 50
功率 Power 160W
带宽 Bandwidth 35MHz
结电容 Junction Capacitance 500pf

详细描述

Sanken LAPT 晶体管采用创新设计,采用独特的 Sanken 薄晶片生产技术的进步进行生产。

这些 NPN 功率晶体管通过降低热阻实现更快的上电,并提供更高的雪崩击穿电压额定值。

MT-100 封装的高功率处理能力允许在电路板布局上占用更小的空间。

该系列晶体管不仅非常适用于 AV(视听)放大器和接收器的多通道应用,也非常适用于 PA(专业音频系统)放大器的并联应用。

2SA2223 是 MJW21193 或 NJW21193 的合适等效物或替代品。

Sanken LAPT transistors have an innovative design, produced by adapting advancements in the unique Sanken thin-wafer production technology.

These NPN power transistors achieve faster power-up by decreasing thermal resistance, and provide a higher avalanche breakdown voltage rating.

The high power handling capacity of the MT-100 package allows a smaller footprint on the circuit board layout.

This series of transistors is very well suited not only for multichannel applications for AV (audio-visual) amplifiers and receivers, but also for parallel connection applications for PA (professional audio system) amplifiers.

The 2SA2223 is a suitable equivalent or replacement for the MJW21193 or NJW21193.

规格书和资料

Data Sheet